Goodram IRDM SSD 512 GB
Nieuwe generatie M.2 SSD voor hoge snelheid dataoverdracht tot 3200 MB/s leessnelheid.

Belangrijkste eigenschappen
- 512 GB
- M.2 2280
- PCIe 3x4 interface (M key)
- NVMe 1.3
- 8-channel Phison E12 controller with DRAM buffer
- 3D TLC NAND Flash
- 1800000 uur MTBF

Lezen/schrijven
Incompressible data read speed (max.) 3200 MB/s
Incompressible data write speed (max.) 2000 MB/s
Random read operations per second (4K files) (max.) 295000 IOPS
Random write operations per second (4K files) (max.) 500000 IOPS
TBW 300

Specificaties
Capaciteit: 512 GB
Interface: M.2 PCIe NVMe gen 3 x4 (M key)
Form factor: M.2 2280
NAND Flash: 3D TLC
Controller: Phison E12 with dram buffer
MTBF: 1 800 000 hours
Operating temperature: 0 - 70°C
Storage temperature: -45 - 85°C